电子器件2017，Vol.40Issue(5)：1060-1064,5.DOI:10.3969/j.issn.1005-9490.2017.05.002
基于红外测温的GaN HEMT器件结构函数法热阻测量
Thermal Resistance Measurement for GaN HEMT Utilizing Structure Function Method Based on IR Temperature Test
翟玉卫 1梁法国 1吴爱华 1郑世棋 1乔玉娥 1刘霞美1
作者信息
- 1. 中国电子科技集团公司第十三研究所,石家庄050051
- 折叠
摘要
Abstract
In order to measure the thermal resistance of GaN HEMT accurately,under two different thermal contact conditions between case and fixture,cooling curves were measured using an improved IR microscope,respectively. Structure function method was used to deal with the cooling curves,the cumulative structure function curves which show the thermal resistances of layers in GaN HEMT were obtained. When the material between case and fixture was changed from air to thermal grease,the cumulative structure function curves changed obviously. Thermal resistance of different layers of DUT can be distinguished from structure function curves,the DUT was divided into a 7 layers structure,that was approximately consistent with the real device structure.关键词
热阻测量/结构函数/红外测温/热阻/GaNHEMT/降温曲线Key words
thermal resistance measurement/structure function/infrared temperature test/thermal resistance/GaN HEMT/cooling curve分类
信息技术与安全科学引用本文复制引用
翟玉卫,梁法国,吴爱华,郑世棋,乔玉娥,刘霞美..基于红外测温的GaN HEMT器件结构函数法热阻测量[J].电子器件,2017,40(5):1060-1064,5.
