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Field-effect transistor memories based on ferroelectric polymers

Yujia Zhang Haiyang Wang Lei Zhang Xiaomeng Chen Yu Guo Huabin Sun Yun Li

半导体学报（英文版）2017，Vol.38Issue(11)：1-14,14.

半导体学报（英文版）2017，Vol.38Issue(11)：1-14,14.DOI:10.1088/1674-4926/38/11/111001

Field-effect transistor memories based on ferroelectric polymers

Yujia Zhang ¹Haiyang Wang ¹Lei Zhang ¹Xiaomeng Chen ¹Yu Guo ¹Huabin Sun ¹Yun Li¹

作者信息

1. School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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摘要

关键词

ferroelectric polymers/field-effect transistor memories/ferroelectricity

Key words

ferroelectric polymers/field-effect transistor memories/ferroelectricity

引用本文复制引用

Yujia Zhang,Haiyang Wang,Lei Zhang,Xiaomeng Chen,Yu Guo,Huabin Sun,Yun Li..Field-effect transistor memories based on ferroelectric polymers[J].半导体学报（英文版）,2017,38(11):1-14,14.

基金项目

Program supported partially by the NSFC (Nos.61574074,61774080),NSFJS (No.BK20170075),and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No.61511140098). （Nos.61574074,61774080）

半导体学报（英文版）

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ISSN：1674-4926

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