首页|期刊导航|半导体学报（英文版）|Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer

Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer

Zejie Du Boyu Dong Ruifei Duan Tongbo Wei Shuo Zhang Junxi Wang Xiaoyan Yi Yiping Zeng Junxue Ran Jinmin Li

半导体学报（英文版）2017，Vol.38Issue(11)：26-30,5.

半导体学报（英文版）2017，Vol.38Issue(11)：26-30,5.DOI:10.1088/1674-4926/38/11/113003

Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer

Zejie Du ¹Boyu Dong ²Ruifei Duan ³Tongbo Wei ¹Shuo Zhang ¹Junxi Wang ¹Xiaoyan Yi ¹Yiping Zeng ¹Junxue Ran ¹Jinmin Li¹

作者信息

1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
3. PVD Division, North Microelectronics, Beijing 100176, China
折叠

摘要

关键词

metalorganic vapor phase epitaxy/aluminum nitride/deep UV-LED

Key words

metalorganic vapor phase epitaxy/aluminum nitride/deep UV-LED

引用本文复制引用

Zejie Du,Boyu Dong,Ruifei Duan,Tongbo Wei,Shuo Zhang,Junxi Wang,Xiaoyan Yi,Yiping Zeng,Junxue Ran,Jinmin Li..Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer[J].半导体学报（英文版）,2017,38(11):26-30,5.

基金项目

Project supported by the National Natural Sciences Foundation of China (Nos.61334009,61474109,61306050). （Nos.61334009,61474109,61306050）

半导体学报（英文版）

OACSCDCSTPCD

ISSN：1674-4926

访问量0

下载量0

段落导航