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High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

Wenzhou Wu Buwen Cheng Jun Zheng Zhi Liu Chuanbo Li Yuhua Zuo Chunlai Xue

半导体学报（英文版）2017，Vol.38Issue(11)：55-59,5.

半导体学报（英文版）2017，Vol.38Issue(11)：55-59,5.DOI:10.1088/1674-4926/38/11/114003

High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

Wenzhou Wu ¹Buwen Cheng ²Jun Zheng ¹Zhi Liu ²Chuanbo Li ¹Yuhua Zuo ²Chunlai Xue¹

作者信息

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
折叠

摘要

关键词

avalanche photodiode/high-frequency tunneling effect/high gain-bandwidth product/fiber optic communication

Key words

avalanche photodiode/high-frequency tunneling effect/high gain-bandwidth product/fiber optic communication

引用本文复制引用

Wenzhou Wu,Buwen Cheng,Jun Zheng,Zhi Liu,Chuanbo Li,Yuhua Zuo,Chunlai Xue..High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect[J].半导体学报（英文版）,2017,38(11):55-59,5.

基金项目

Project supported by in part by the National Natural Science Foundation of China (Nos.61534005,61675195),the Beijing Science and Technology Commission (No.Z151100003315019),and the Natural Science Foundation of Beijing Municipality (No.4162063). （Nos.61534005,61675195）

半导体学报（英文版）

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ISSN：1674-4926

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