首页|期刊导航|半导体学报（英文版）|Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells
Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cellsOACSCDCSTPCD
Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells
Shuwei Zhang;Xiangbo Zeng
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083,China
nanocrystalline siliconband gapp-layershort-circuit current densitysolar cells
nanocrystalline siliconband gapp-layershort-circuit current densitysolar cells
《半导体学报（英文版）》 2017 (11)
76-80,5
Project partly supported by the National High Technology Research and Development Program of China (No.2011AA050504).
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