首页|期刊导航|半导体学报（英文版）|Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells

Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells

Shuwei Zhang Xiangbo Zeng

半导体学报（英文版）2017，Vol.38Issue(11)：76-80,5.

半导体学报（英文版）2017，Vol.38Issue(11)：76-80,5.DOI:10.1088/1674-4926/38/11/114007

Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells

Shuwei Zhang ¹Xiangbo Zeng²

作者信息

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083,China
折叠

摘要

关键词

nanocrystalline silicon/band gap/p-layer/short-circuit current density/solar cells

Key words

nanocrystalline silicon/band gap/p-layer/short-circuit current density/solar cells

引用本文复制引用

Shuwei Zhang,Xiangbo Zeng..Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells[J].半导体学报（英文版）,2017,38(11):76-80,5.

基金项目

Project partly supported by the National High Technology Research and Development Program of China (No.2011AA050504). （No.2011AA050504）

半导体学报（英文版）

OACSCDCSTPCD

ISSN：1674-4926

访问量0

下载量0

段落导航