东南大学学报（自然科学版）2017，Vol.47Issue(5)：933-937,5.DOI:10.3969/j.issn.1001-0505.2017.05.015
原子层沉积二硫化钼薄膜的机理及生长薄膜的质量
Growth mechanism and quality of MoS2 film obtained by atomic layer deposition
摘要
Abstract
MoS2 films were prepared by atomic layer deposition using MoCl5 and H2S as precursors,while Si and Al2 O3 were used as substrates,respectively.The thin films grown at different temperatures from 450 to 490 ℃ were observed by EDS (energy dispersive spectrometer).The results show that 460 ℃ is the most suitable growth temperature and the Al2 O3 substrate is more suitable than Si as a substrate.The morphologies and the crystal structures of the thin films were studied by SEM (scanning electron microscope),XRD (X-ray diffraction),Raman spectroscopy,and TEM (transmission electron microscope).The results show that the surface of the uniform film is a petal like structure and the film thickness by 100 cycles is about 20 rm.The grown MoS2 is 2H structure and the (002) crystal plane is parallel to the substrate.It is clear that d002,d100 and d110 for lattice planes (002),(100) and (110) are 0.62,0.28 and 0.17 nm,respectively.Furthermore,the average growth rate of the high crystallinity MoS2 film is 0.2 nm.关键词
MoS2薄膜/原子层沉积/生长温度/晶体结构Key words
MoS2 thin films/atomic layer deposition/growth temperature/crystal structure分类
机械制造引用本文复制引用
黄亚洲,刘磊,沙菁(契),陈云飞..原子层沉积二硫化钼薄膜的机理及生长薄膜的质量[J].东南大学学报（自然科学版）,2017,47(5):933-937,5.基金项目
国家自然科学基金资助项目(U1332134). （U1332134）
