硅酸盐通报2017，Vol.36Issue(10)：3498-3503,6.
多热源合成碳化硅温度场及压力场变化规律研究
Change Law of Temperature and Pressure Field Synthesis Silicon Carbide by Multi-heat-source
摘要
Abstract
With numerical simulation and industry experiments of temperature and pressure field in multi and single heat source , the temperature and pressure field was analyzed .The results show that due to superposition effect of temperature field in multi heat source furnace will increase suitable for silicon carbide synthesis area , and dispersed heat source can avoid decomposition of silicon carbide .At the same time, seen from the two synthesis furnace pressure distribution , the most pressure is 1.525 ×101 kPa in single heat source , it will tend cause spouting of furnace , and the maximum pressure of multi heat source is 1.256 ×101 kPa the pressure can ensure smooth synthesis process .关键词
多热源/碳化硅/温度场/压力场Key words
multi-heat-source/silicon carbide/temperature field/pressure field分类
化学化工引用本文复制引用
李阳,陈杰,王旭阳,王飞,王晓刚..多热源合成碳化硅温度场及压力场变化规律研究[J].硅酸盐通报,2017,36(10):3498-3503,6.基金项目
陕西铁路工程职业技术学院科研基金项目(KY2016-34) （KY2016-34）
陕西省教育厅科研计划项目(12JK0785) （12JK0785）
