人工晶体学报2017，Vol.46Issue(10)：2090-2094,5.
多晶硅的反应离子刻蚀(R IE)制绒绒面研究
Research on Surface Texture of Multicrystalline Silicon by Reactive Ion Etching
张婷 1郭永刚 1屈小勇 1陈璐 1王举亮1
作者信息
- 1. 国家电投集团西安太阳能电力有限公司,西安710000
- 折叠
摘要
Abstract
The experiment was based on ( Reaction Ion Eatching ) RIE technology to prepare polycrystalline silicon wafer with nano scale , the surface texture structure can obviously reduce the reflectivity and improve the short-circuit current of crystalline silicon cells .The experiment specifically refers to the etching of polysilicon wafers in the same mixed acid solution to remove surface damage , and used RIE technology to make texture with different size , then we adjusted the cleaning process and cleaned the wafer by according to the different texture to prepare cells .Finally we find that if the texture structure is very minimum , the damage on wafer can not be stripped completely and the antireflective SiNx is hard to deposition .The experiment results show that when prepared cells by RIE technology , the minimum texture structure and lowest reflectivity is not good , but the texture size of Nano pit should be controlled at 240 nm to 360 nm to match the cleaning and deposition of antireflective coatings more effectively , to be better made polycrystalline cells of high conversion efficiency .关键词
反应离子刻蚀(RIE)/纳米凹坑绒面/反射率/SiNx膜沉积Key words
reactive ion etching(RIE)/nano pit texture/reflectivity/SiNx deposition分类
信息技术与安全科学引用本文复制引用
张婷,郭永刚,屈小勇,陈璐,王举亮..多晶硅的反应离子刻蚀(R IE)制绒绒面研究[J].人工晶体学报,2017,46(10):2090-2094,5.
