中北大学学报（自然科学版）2017，Vol.38Issue(5)：614-618,5.DOI:10.3969/j.issn.1673-3193.2017.05.019
原子层沉积制备TiN薄膜对三维MIM电容器的影响
Effect of TiN Films Fabricated by Atomic Layer Deposition Technology on MIM Capacitors with Three Dimensional Structures
摘要
Abstract
Two types of 3D MIM capacitors based on silicon microstructures with high aspect ratio are prepared by atomic layer deposition technology for W,Ti and Al2 O3 acted as electrodes,buffering layers and insulators,respectively.The properties of TiN thin films and the effect on MIM capacitors are in-vestigated using Scan Electronic Microscope,X-ray Photoelectron Spectroscopy,X-Ray Diffraction and electrical measuring instruments,respectively.The results indicate that amorphous TiN films have good stoichiometric ratio and conductivity characteristics and play the role of stress buffering between metal and dielectric,resulting in excellent adhesion and the increase of capacitance value in 8.3%.关键词
MIM电容器/TiN/原子层沉积/高深宽比/电学性能Key words
Metal-Insulator-Metal capacitor/TiN/atomic layer deposition/high aspect ratio/electrical property分类
数理科学引用本文复制引用
穆继亮,丑修建,马宗敏,何剑,熊继军..原子层沉积制备TiN薄膜对三维MIM电容器的影响[J].中北大学学报（自然科学版）,2017,38(5):614-618,5.基金项目
国家自然科学基金面上项目(61471326) （61471326）
国家高新技术研究发展计划(863 计划)项目课题(2015AA042601) （863 计划）
