太原理工大学学报2017，Vol.48Issue(6)：1014-1020,7.DOI:10.16355/j.cnki.issn1007-9432tyut.2017.06.024
单斜氧化锆晶体压痕的分子动力学模拟研究
Molecular Dynamics Simulation of Monoclinic Zirconia During Indentation
摘要
Abstract
Molecular dynamics simulation was performed to study the deformation behaviors of monoclinic zirconia substrate for three different indentation orientations and different load speed during indentation.The coordination number were adopted to analyze the atomic configura-tion of the substrate and the variation of dislocations in different indentation depths.The P-h curves and deformation behaviors for various indentation orientations were compared.Three types of slip planes are observed in m-ZrO2 for three different indentation orientations;The (100) plane and (100)plane indentation produce obvious pile-up and sink-in phenomena,respectively, and the response of indentation shows dis continuous fluctuations in their P-h curves.Compari-son of the indentation results at three different velocity on (001)plane,reveals the significant in-fluence of the stress relaxation on the strain hardening and load fluctuation at low loading velecity.关键词
分子动力学/单斜氧化锆/位错/压痕/应力驰豫Key words
molecular dynamics/m-ZrO2/dislocation/indentation/stress relaxation分类
矿业与冶金引用本文复制引用
贾武斐,林伟辉,刘二强,肖革胜,树学峰..单斜氧化锆晶体压痕的分子动力学模拟研究[J].太原理工大学学报,2017,48(6):1014-1020,7.基金项目
国家自然科学基金资助项目(11390362) （11390362）
