物理化学学报2017，Vol.33Issue(10)：2092-2098,7.DOI:10.3866/PKU.WHXB201705114
热压烧结靶材制备氧化铟锌薄膜晶体管
Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target
摘要
Abstract
The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper.IZO targets was prepared by hot-pressing sintering using mixed power (20％ (w,mass fraction) In2O3),then fabricated TFT with above sintering targets.X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed.The target was typical densification process with sintering temperature of 850 ℃.The volatilization of In2O3 undermined the densification of the target,with condition of 900 ℃-60 min.It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In2O3 volatilization,facilitated the sintering densification of IZO target and formed the InZnOx crystal phase,thereby increased the density of the target.IZO TFTs' performance showed the sputtering deteriorates the film quality with low-density target,and the grain of the high-density target was slightly abnormal,which resulted in deterioration of the film uniformity,all reduced the performance of TFT.Therefore,an appropriate high-density target was essential for the preparation of IZO-TFT.关键词
薄膜晶体管/氧化铟锌/热压烧结/靶材/磁控溅射Key words
Thin film transistors/IZO/Hot-pressing sintering/Target/Magnetron sputtering分类
化学化工引用本文复制引用
宋二龙,兰林锋,林振国,孙圣,宋威,李育智,高沛雄,张鹏,彭俊彪..热压烧结靶材制备氧化铟锌薄膜晶体管[J].物理化学学报,2017,33(10):2092-2098,7.基金项目
The project was supported by the National Key Research Program of China (2016YFB0401105),National Natural Science Foundation of China (61204087),Pearl River S&T Nova Program of Guangzhou,China (2014J2200053) and Guangdong Province Science and Technology Plan,China (2015B090914003).国家重点研发计划(2016YFB0401105),国家自然科学基金(61204087),广州市珠江科技新星(2014J2200053)及广东省科技计划(2015B090914003)资助项目 （2016YFB0401105）
