太赫兹科学与电子信息学报2017，Vol.15Issue(5)：697-701,5.DOI:10.11805/TKYDA201705.0697
一种应用于太赫兹频段的平面In0.53Ga0.47As耿氏二极管
Design and fabrication of planar In0.53Ga0.47As Gunn diode for terahertz wave application
安宁 1曾建平 1李志强 1刘海涛 1唐海林1
作者信息
- 1. 中国工程物理研究院 微系统与太赫兹研究中心,四川 成都 610200
- 折叠
摘要
Abstract
Fabrication and measurement of the In0.53Ga0.47As based planar Gunn diodes on the InP semi-insulating substrate is presented. In order to increase the RF output power of the planar Gunn devices, the planar Gunn diode is designed in 50 Ω Co-Planar Wave(CPW) guide format, which is designed using the Advanced Design System(ADS-2011). Meanwhile, increasing the area of the metal pads can improve the heat dissipation. For a 120 μm wide device with a 2 μm channel length, experimental results show a fundamental oscillation frequency of 168.3 GHz with a RF output power of -5.21 dBm. These planar Gunn devices show great potential as solid-state THz signal sources.关键词
太赫兹/In0.53Ga0.47As/平面耿氏二极管/振荡频率Key words
terahertz/In0.53Ga0.47As/planar Gunn diode/fundamental oscillation frequency分类
信息技术与安全科学引用本文复制引用
安宁,曾建平,李志强,刘海涛,唐海林..一种应用于太赫兹频段的平面In0.53Ga0.47As耿氏二极管[J].太赫兹科学与电子信息学报,2017,15(5):697-701,5.
