电子器件2017，Vol.40Issue(6)：1339-1347,9.DOI:10.3969/j.issn.1005-9490.2017.06.003
基于氮化镓器件的Boost PFC设计与损耗分析
Loss Analysis and Design of GaN-Based Boost PFC
高裴石 1王佳宁 1张兴1
作者信息
- 1. 合肥工业大学电气与自动化工程学院,合肥230009
- 折叠
摘要
Abstract
Si-based PFC Boost has been widely studied. As the characteristics of Si devices have reached the limit, converter is very difficult to improve. The growing popularity of GaN devices have the capacity for improved converter performance to a new level. A design of Boost PFC GaN-based devices is introduced,from the main circuit design,loss analysis to control principle. Finally,the use of GaN HEMT and SiC diodes and selected NCP1654 as the controller achieves a 300 W 200 kHz PFC, the maximum theoretical efficiency reaches 98. 1%. The system design is verified by simulation and experiment,which shows the potential of wide bandgap semiconductor device in improving system efficiency.关键词
BoostPFC/GaN/损耗分析/效率Key words
Boost PFC/GaN/loss analysis/efficiency分类
信息技术与安全科学引用本文复制引用
高裴石,王佳宁,张兴..基于氮化镓器件的Boost PFC设计与损耗分析[J].电子器件,2017,40(6):1339-1347,9.
