理化检验-物理分册2017，Vol.53Issue(12)：871-873,878,4.DOI:10.11973/lhjy-wl201712004
直流溅射法制备SnO2纳米薄膜及其表征
Preparation of SnO2 Nanometer Film by DC Sputtering and Its Characterization
摘要
Abstract
SnO2 nanometer film was prepared by direct-current (DC)sputtering method with a target matrial of pure tin.The phase structure and thickness of the nanometer film was respectively analyzed and tested by X-ray diffractometer,transmission electron microscope and step profiler.The results show that crystalline SnO2 nanometer film composed of SnO2 nanoparticles with diameter ranging from several nanometers to dozens of nanometers could be prepared on substrate of monocrystalline silicon.Meanwhile,amorphous SnO2 nanometer film could be prepared on microslide substrate.By controlling the sputtering time,a series of SnO2 nanometer film with different thickness could be obtained and the formula of film thickness of SnO2 nanometer film prepared by DC sputtering method was d=0.29UIt (d being film thickness,?,1 ?=0.1 nm;U being sputtering voltage,V;I being sputtering current,A;t being sputtering time,s).关键词
直流溅射/SnO2/纳米薄膜/衬底/物相结构/膜厚公式Key words
DC sputtering/SnO2/nanometer film/substrate/phase structure/formula of film thickness分类
矿业与冶金引用本文复制引用
刘敬茹,张蓓..直流溅射法制备SnO2纳米薄膜及其表征[J].理化检验-物理分册,2017,53(12):871-873,878,4.基金项目
北京市自然科学基金资助项目(2162025) （2162025）
