物理学报2017，Vol.66Issue(24)：181-190,10.DOI:10.7498/aps.66.246102
空间高能离子在纳米级SOI SRAM中引起的 单粒子翻转特性及物理机理研究
Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energeticions
摘要
Abstract
Based on Monte-Carlo method, the characteristics and physical mechanisms for deposited-energy spectra in sensitive volume (SV), single event upset cross sections, and on-orbit error rates in 65–32 nm silicon-on-insulator static random access memory (SOI SRAM) devices induced by space energetic ions are investigated. Space ions on geostationary earth orbit exhibit a flux peak at an energy point of about 200 MeV/n. In consequence, the single event response of nanometric SOI SRAMs under 200 MeV/n heavy ions is studied in detail. The results show that 200 MeV/n space ions exhibit the large straggling of deposited-energy in the device SV with thickness ranging from 60 nm to 40 nm, which causes the single event upsets to occur in the sub-LETth region. The device SV can only partially collect the electron-hole pairs in the single ion track with a wide distribution of secondary electrons. As a result, the maximum and average deposited-energy in the SV decrease by 25％and 33.3％, respectively. Further, the single event upset probability decreases and the on-orbit error rate decreases by about 80％. With the downscaling of feature size, the per-bit saturated cross sections and on-orbit error rates of nanometric SOI SRAM devices decrease dramatically. The phenomenon of constant-increasing single event upset cross section with higher ion linear energy transfer (LET) is not observed, owing to the fact that (a) the density of electron-hole pairs in the track of 200 MeV/n space ion is relatively low and (b) the SOI device has thin sensitive volume, which results in the fact that the secondary-electron effect cannot upset nearby sensitive cells. Besides, it is found that the direct-ionization process of trapped protons leads to an increase of on-orbit error rate of 65 nm SOI SRAM by one to two orders of magnitude.关键词
绝缘体上硅/单粒子翻转/二次电子/能损歧离Key words
silicon-on-insulator/single event upset/secondary electron/deposited energy straggling引用本文复制引用
张战刚,雷志锋,岳龙,刘远,何玉娟,彭超,师谦,黄云,恩云飞..空间高能离子在纳米级SOI SRAM中引起的 单粒子翻转特性及物理机理研究[J].物理学报,2017,66(24):181-190,10.基金项目
国家自然科学基金(批准号:11505033)、广东省省级科技计划(批准号:2015B090901048,2017B090901068,2015B090912002)和广州市科技计划(批准号:201707010186)资助的课题. Project supported by the National Natural Science Foundation of China (Grant No.11505033),the Science and Technology Research Project of Guangdong,China (Grant Nos.2015B090901048,2017B090901068,2015B090912002),and the Science and Technology Plan Project of Guangzhou,China (Grant No.201707010186). （批准号:11505033）
