物理学报2017，Vol.66Issue(24)：244-250,7.DOI:10.7498/aps.66.247302
具有p-GaN岛状埋层耐压结构的横向AlGaN/GaN高电子迁移率晶体管
High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications
摘要
Abstract
The relatively low breakdown voltage (BV ) seriously restricts the high power application of GaN based high electron mobility transistors (HEMTs). In this work, a novel AlGaN/GaN HEMT with buried p-n junctions is investigated to improve the breakdown characteristics by introducing six equidistant p-GaN islands buried buffer layer (PIBL) into the n-GaN epitaxial layer. The p-GaN islands act as reversed p-n junctions, which produces new electric field peaks at the edges of p-GaN islands, then realizing a much high breakdown voltage, and the reversed p-n junctions can help to suppress punch-through effect in buffer layer. Furthermore, the characteristics of proposed device are analyzed in detail from the aspects of off-state I-V characteristics, equipotential contour distribution, off-state electric field distribution, off-state carrier distribution and output characteristics. Simulated equipotential contour distribution shows that under the condition of high-voltage blocking state, multiple reverse p-n junctions introduced by the buried p-GaN islands produce five new electric field peaks, realizing a more uniform equipotential contour distribution especially at the edges of the buried p-islands. Then off-state electric field distribution demonstrates that p-GaN islands modulate the surface and bulk electric fields, which makes the voltage distributed in a larger area, therefore presenting a much higher breakdown voltage. It can be seen from off-state carrier distribution that the electrons in the buffer layer fully depleted in PIBL HEMT effectively suppress the buffer leakage current, thus alleviating the buffer-leakage-induced impact ionization leading to a high breakdown BV of over 1700 V with gate-to-drain length of 10 μm, which is nearly 3 times larger than BV of 580 V in conventional AlGaN/GaN HEMT. Although, the introduction of p-type buried layer narrows the current path and causes an improved on-resistance, simulation shows that the specific on-resistance (Ron,sp) of PIBL HEMT is only about 1.47 m?·cm2, while the BV of the PIBL device is over 1700 V, and the obtained figure of merit (F OM =BV 2/Ron,sp) reaches as high as 1966 MW·cm-2. The optimization of device structure reveals that when the distance between p-GaN layer and AlGaN layer (t) is 0.2 μm, a thinner buried p-GaN island (tp) should help to realize a more significant electric field modulation, and PIBL HEMT can achieve a maximum BV of 1789 V with a tp = 0.1 μm. Compared with the traditional AlGaN/GaN HEMT, the PIBL HEMT reveals a higher breakdown voltage, meanwhile ensuring low Ron,sp, which makes this structure a promising candidate in the applications of high power electronic devices.关键词
AlGaN/GaN/p-GaN岛掩埋缓冲层/电场/击穿Key words
AlGaN/GaN/p-GaN island buried buffer layer/electric field/breakdown引用本文复制引用
张力,林志宇,罗俊,王树龙,张进成,郝跃,戴扬,陈大正,郭立新..具有p-GaN岛状埋层耐压结构的横向AlGaN/GaN高电子迁移率晶体管[J].物理学报,2017,66(24):244-250,7.基金项目
中国博士后科学基金(批准号:2015M582610)和国家自然科学基金(批准号:61404014,61574023)资助的课题. Project supported by the China Postdoctoral Science Foundation (Grant No.2015M582610) and the National Natural Science Foundation of China (Grant Nos.61404014,61574023). （批准号:2015M582610）
