发光学报2017，Vol.38Issue(12)：1622-1628,7.DOI:10.3788/fgxb20173812.1622
氮掺铟锡锌薄膜晶体管的制备及其光电特性
Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors
摘要
Abstract
In-Sn-Zn oxide thin-film transistors were deposited at different nitrogen flow rates on P-Si<100> substrate by RF magnetron sputtering. The influence of nitrogen on the structure, optical and electrical properties and stabilities of ITZO TFTs was studied. The results show that nitrogen has no obvi-ous effect on the structure of ITZO films and all thin films are amorphous. The average transmittance of all ITZO films approach or exceed 90% in the visible region and the optical band gaps are 3. 28-3. 32 eV. When the nitrogen flow rates increase to 4 mL/min during the sputter deposition, the ITZO TFTs with low interface state density(~4. 3 × 1011 cm-2 ) show excellent electrical properties, the sub-thresh-old swing is 0. 39 V/dec and on/off ratio is 106 operated with the field-effect mobility (μFE ) of 18. 72 cm2/(V?s). Moreover, the TFTs show better stability than others in the positive gate bias stress test. Overall, the suitable addition of nitrogen can improve the electrical performance and the stability of the ITZO TFTs by the passivation of oxygen vacancies and the drop of interface state density.关键词
氧化铟锡锌薄膜晶体管/射频磁控溅射/氮掺杂/界面态密度Key words
ITZO TFTs/RF magnetron sputtering/nitrogen doping/interface state density分类
信息技术与安全科学引用本文复制引用
李治玥,吕英波,赵继凤,宋淑梅,杨波波,辛艳青,王昆仑,杨田林..氮掺铟锡锌薄膜晶体管的制备及其光电特性[J].发光学报,2017,38(12):1622-1628,7.基金项目
国家自然科学基金(11504202) （11504202）
山东省科技攻关课题(2014GGX102022)资助项目Supported by National Natural Science Foundation of China (11504202) （2014GGX102022）
Science and Technology Project of Shandong Province (2014GGX102022) （2014GGX102022）
