发光学报2017，Vol.38Issue(12)：1643-1649,7.DOI:10.3788/fgxb20173812.1643
基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性
Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector
摘要
Abstract
PBDT-TT-F:PCBM based heterojunction red photodetectors were fabricated by the ex-perimental method combined with spin coating process and vapor deposition process. The effects of the mixing degree and thickness of the active layer, the annealing temperature and other factors on the photoelectric properties of the device were studied. The experimental results show that the per-formance of the device is the best with the mixing mass ratio of PBDT-TT-F:PCBM of 1:1 . 5 , the thickness of 150 nm, the annealing temperature of 100 ℃, and the annealing time of 15 min, re-spectively. The photocurrent density of the diode is 0 . 85 mA/cm2 , and the light response is 128 mA/W.关键词
有机光电探测器/红光/活性层/光电特性Key words
organic detectors/red light/active layer/photoelectric characteristics分类
信息技术与安全科学引用本文复制引用
安涛,涂传宝,杨圣,吴俊宇..基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性[J].发光学报,2017,38(12):1643-1649,7.
