桂林电子科技大学学报2017，Vol.37Issue(5)：382-386,5.
TSV互连结构缺陷故障测试
Test for defect fault of TSV interconnect structure
摘要
Abstract
In order to effectively test the failure of the through silicon via,TSV equivalent circuit based on silicon substrate and defective fault circuit are established,and the multi-tone dither scheme is proposed.The multi-tone signal with Gaussian white noise is added as the test excitation and the equivalent circuit of TSV fault is tested and simulated.The peak-to-aver-age ratio of test results to determine the size of the fault.The method improves the sensitivity of the small fault test in nano-structures,the high accuracy in fault recognition,the minimum size of the fault can be reached micron level.关键词
硅通孔/缺陷故障/多音抖动测试/故障检测Key words
through silicon via/defect fault/multi-tone dither testing/fault detection分类
信息技术与安全科学引用本文复制引用
尚玉玲,孙丽媛..TSV互连结构缺陷故障测试[J].桂林电子科技大学学报,2017,37(5):382-386,5.基金项目
国家自然科学基金(61661013,51465013) （61661013,51465013）
桂林电子科技大学研究生教育创新计划(2016YJCX28) （2016YJCX28）
