硅酸盐学报2018，Vol.46Issue(1)：59-63,5.DOI:10.14062/j.issn.0454-5648.2018.01.08
不同粒径磨料对蓝宝石晶片及其抛光过程的影响
Effect of Particle Size of Abrasive on Sapphire Wafer Polishing Process
摘要
Abstract
The sapphire wafer was grinded and polished by different particle size of the B4C abrasive including W28 and W7. The influence of B4C abrasive with different particle size on the removal rate, roughness, flatness, bending degree and warpage of sapphire wafer were investigated. The results show that the abrasives of W28 and W7 have different polishing performances. Under the same processing conditions, the removal rate of B4C is higher than that of W28. However, the roughness of the sapphire wafer with W28 is greater and the grinding damage layer is deeper (i.e., Ra=1.319 nm, and Rt=2.584 nm). The removal rate of W7 is lower, the damage layer is removed (i.e., Ra=0.194 nm, and Rt=0.361 nm), the surface quality is high, which is suitable for finishing flatness, after removal of 20 μm. The surface roughness of the finished sapphire wafer is better than that of W28.关键词
蓝宝石/碳化硼磨料/移除速率/损伤层/粗糙度Key words
sapphire/boron carbide abrasive/particle size/removal rate/damage layer/surface roughness分类
数理科学引用本文复制引用
张丽萍,刘景和,苗如林,沈正皓,郭立,陈庆敏,林海,李春,李建勳,曾繁明..不同粒径磨料对蓝宝石晶片及其抛光过程的影响[J].硅酸盐学报,2018,46(1):59-63,5.基金项目
吉林省科技厅创新项目(20160414043GH)资助. （20160414043GH）
