光学精密工程2017，Vol.25Issue(10)：2676-2681,6.DOI:10.3788/OPE.20172510.2676
CMOS图像传感器光子转移曲线辐照后的退化机理
Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation
摘要
Abstract
As application scopes of photon transfer curve and conversion gain of a CMOS (Complemen-tary Metal-oxide-Semiconductor)image sensor are limited after irradiated by EMVA 1288 standard tes-ting ,an improved testing method of photon transfer curve and conversion gain of CM OS image sensor is presented .By adjusting test conditions ,the method limits the dark current and the non-uniform noise of dark current from the CMOS image sensor after irradiation to solve the correct device parame-ters .By which the device performance changes caused by irradiation are intuitively obtained .An ex-perimental test is performed with the proposed method ,and the results show that the switching gain caused by irradiation is reduced by 7 .82％ .On the basis of the results ,the degradation mechanism of photon transfer curve and conversion gain of the CMOS caused by irradiation is analyzed .The results point out that conversion gain degradation comes from the increses of dark current and the non-uni-form noise of dark current caused by the proton radiation ionization effect and displacement effect . The paper provides a theoretical basis for mastering the spatial radiation effect of CMOS image sen-sors .关键词
CMOS图像传感器/辐照/光子转移曲线/转换增益Key words
CMOS image sensor/irradiation/photon transfer curve/conversion gain分类
信息技术与安全科学引用本文复制引用
冯婕,李豫东,文林,周东,马林东..CMOS图像传感器光子转移曲线辐照后的退化机理[J].光学精密工程,2017,25(10):2676-2681,6.基金项目
中国科学院西部之光重点资助项目(No.ZD201301) （No.ZD201301）
新疆维吾尔自治区青年科技创新人才培养工程资助项目(No.qn2015yx035) （No.qn2015yx035）
中国科学院西部之光青年博士资助项目(No.XBBS201316) （No.XBBS201316）
中科院西部之光西部青年学者B类项目(No.2016-QNXZ-B-2) （No.2016-QNXZ-B-2）
中国科学院青年创新促进会资助项目 （）
