量子电子学报2017，Vol.34Issue(6)：641-647,7.DOI:10.3969/j.issn.1007-5461.2017.06.001
激光辐照GaN改善其欧姆特性的研究进展
Research progress on GaN Ohmic properties improvement by laser irradiation
摘要
Abstract
GaN materials have wide application prospects in the fields of high frequency,high power,high temperature and high-density integrated electronic devices etc,which is forefront and hot spots in global semiconductor field.In recent years,great progress has been made in the research of low contact resistivity of metal/GaN Ohmic contact.However,the metal/GaN Ohmic contact is still one of the most important factors that restrict the development and application of GaN devices.The introduction of laser technology provides a new method for the realization of Ohmic contact of metal/GaN.Investigation of Ohmic properties improvement of GaN materials by laser irradiation is summarized.Research progress of the excimer laser irradiation on the hole concentration change and improvement of GaN materials Ohmic contact properties is introduced.The low Ohmic contact resistivity scheme for GaN is discussed in order to explore the direction of better metal/GaN Ohmic contact.关键词
材料/接触电阻率/激光辐照/GaNKey words
materials/contact resistivity/laser irradiation/GaN分类
信息技术与安全科学引用本文复制引用
胡红涛,邵景珍,方晓东..激光辐照GaN改善其欧姆特性的研究进展[J].量子电子学报,2017,34(6):641-647,7.基金项目
Supported by Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology(脉冲功率激光技术国家重点实验室开放研究基金资助项目,SKL2014KF03) （脉冲功率激光技术国家重点实验室开放研究基金资助项目,SKL2014KF03）
