西安电子科技大学学报（自然科学版）2017，Vol.44Issue(6)：70-74,168,6.DOI:10.3969/j.issn.1001-2400.2017.06.013
可双向导通的凹栅隧穿晶体管
Bidirectional current path recessed gate tunnel field-effect transistor
摘要
Abstract
The structure asymmetry of the conventional tunneling transistor makes it only able to have a unidirectional current path,which will cause the inconvenience of circuit design.In order to overcome this shortcoming,a novel recessed gate tunnel field-effect transistor with high performance is proposed in this paper and verified by silvaco TCAD software. The effects of process parameters such as doping concentration and geometry dimension on the energy band and properties of the device are analyzed. Simulation results show that the I on/I of ratio can reach 5× 106 at a 0.5 V driving voltage and the minimum subthreshold swing of 12 mV/dec at the 0.1 V gate to source voltage.In general,this device has a large switching ratio and a very steep subthreshold slope under a low drive voltage.It is expected that this novel device can be one of the promising alternatives for ultra-low power applications.关键词
带带隧穿/隧穿晶体管/凹栅/双向电流通路Key words
band-to-band tunneling/tunnel field-effect transistors/recessed gate/bidirectional current path分类
信息技术与安全科学引用本文复制引用
陈树鹏,王树龙,刘红侠,李伟,汪星,王倩琼..可双向导通的凹栅隧穿晶体管[J].西安电子科技大学学报（自然科学版）,2017,44(6):70-74,168,6.基金项目
国家自然科学基金资助项目(61376099,61434007,61504100) （61376099,61434007,61504100）
