液晶与显示2017，Vol.32Issue(11)：847-852,6.DOI:10.3788/YJYXS20173211.0847
TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善
Analysis and improvement of Mo-Al-Mo film corrosion in TDDI products
摘要
Abstract
In order to reduce the incidence rate of Lead Open-type line defects in the TDDI products, the mechanism of the Lead Open was studied and validated .Meanwhile ,the improved solution for the defects was determined and put verification based on the results coming from the TDDI production da-ta comparison and the investigation on SD film of the Mo-Al-Mo structure .Three parts of the whole research process were contained .The relationship between the Lead Open incidence and Delay Time was firstly determined ,and then the microstructure of SD film was characterized .Finally ,according to the electrochemical property and film structure of different metals ,a galvanic corrosion model of SD film was also established .The results show that a potential difference (PD) of 1 .47 V exists be-tween Mo and Al ,and the PD has a strong galvanic tendency .In addition ,some penetrating holes with the size of ~ 10 nm are found in the Top Mo ,which can be easily infiltrated by water with the size of ~ 0 .4 nm and thus leading to the galvanic corrosion .Nevertheless ,compared to the existing production conditions ,the corrosion rate can decrease by ~ 30% when adding ~ 25% Top Mo .More importantly ,the incidence rate of Lead Open is found decrease by 1 .4% and maintain the low level of 0 .1% at this time ,which meets the requirement for the defect incidence rate of the TDDI products .关键词
TDDI/LeadOpen/电偶腐蚀/电化学/Mo-Al-MoKey words
TDDI/Lead open/Galvanic corrosion/electrochemistry/Mo-Al-Mo分类
信息技术与安全科学引用本文复制引用
李森,张学智,尚建兴,张大伟,田露,张鹏曲,肖红玺,郝金刚,黄东升,王威..TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善[J].液晶与显示,2017,32(11):847-852,6.基金项目
京东方TFT良率提升基金 Supported by TFT Yield Increase Funds of BOE （）
