| 注册
首页|期刊导航|电工技术学报|基于MOSFET的限流式固态断路器及其过电压抑制

基于MOSFET的限流式固态断路器及其过电压抑制

卢其威 高志宣 滕尚甫 雷婷 何棒棒

电工技术学报2017,Vol.32Issue(24):42-52,11.
电工技术学报2017,Vol.32Issue(24):42-52,11.DOI:10.19595/j.cnki.1000-6753.tces.L70738

基于MOSFET的限流式固态断路器及其过电压抑制

Current Limiting Solid State Circuit Breaker Based on MOSEFT and Its Over Voltage Suppression

卢其威 1高志宣 1滕尚甫 1雷婷 1何棒棒1

作者信息

  • 1. 中国矿业大学(北京)机电与信息工程学院 北京 100083
  • 折叠

摘要

Abstract

Aiming at the occasions of low-voltage AC circuit, this paper theoretically analyzes the voltage across the switch and the current variation characteristics of the power MOSFET based limiting solid-state circuit breaker during the turning-off period. An over-voltage suppression circuit is proposed, and the working principle as well as the theoretical basis of the parameters selection is analyzed. Finally, the theoretical analyses are verified by the experiments, which provides a good guidance of developing current limiting solid-state circuit breaker in the low voltage AC circuit.

关键词

固态断路器/低压/限流/过电压分析/MOSFET

Key words

Solid state circuit breaker (SSCB)/low voltage/current limiting/over-voltage analysis/MOSFET

分类

信息技术与安全科学

引用本文复制引用

卢其威,高志宣,滕尚甫,雷婷,何棒棒..基于MOSFET的限流式固态断路器及其过电压抑制[J].电工技术学报,2017,32(24):42-52,11.

基金项目

国家自然科学基金面上项目资助(51577187). (51577187)

电工技术学报

OA北大核心CSCDCSTPCD

1000-6753

访问量8
|
下载量0
段落导航相关论文