电工技术学报2017，Vol.32Issue(24)：53-58,6.DOI:10.19595/j.cnki.1000-6753.tces.170178
高速集电极沟槽绝缘栅双极晶体管
A Novel Fast Collector Trench Insulated Gate Bipolar Transistor
摘要
Abstract
This paper proposes a novel collector trench insulated gate bipolar transistor (CT-IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect, in which a low doped n-type layer is introduced to increase hole injection efficiency at the collector side. TCAD simulation indicates that the proposed IGBT structure offers a turn-off fall time 49% lower and avalanche energy 32% higher than a conventional field-stop IGBT (FS-IGBT). Therefore, the proposed IGBT is attractive for high-speed and large-power electronic converters.关键词
绝缘栅双极晶体管/电场截止/关断下降时间/雪崩能量/强度Key words
Insulated gate bipolar transistor (IGBT)/field stop/turn-off fall time/avalanche energy/ruggedness分类
信息技术与安全科学引用本文复制引用
蒋梦轩,帅智康,沈征,王俊,刘道广..高速集电极沟槽绝缘栅双极晶体管[J].电工技术学报,2017,32(24):53-58,6.基金项目
国家高技术研究发展计划(2014AA052601)和中央高校基本科研业务费专项项目(106112017CDJXY150099)资助. （2014AA052601）
