有色金属科学与工程2017，Vol.8Issue(6)：13-17,5.DOI:10.13264/j.cnki.ysjskx.2017.06.003
微量磷硅对压延铜箔再结晶行为的影响
Effect of trace phosphorus and silicon on recrystallization behavior of rolled copper foil
摘要
Abstract
The effects of different phosphorus (P) and silicon (Si) impurities on the recrystallization of pure copper foil were studied by means of mechanical and electrical properties test, metallographic observation and electron backscatter diffraction (EBSD). Rolled copper foil grains are elongated along the rolling direction, showing obvious processing of fibrous tissue, existed mainly in the forms of small angle grain boundaries and subgrain boundaries. The contents of P and Si have a significant influence on the recrystallization behavior of rolled pure copper foil. After annealed at 160 ℃ for 1h, the rolled copper foil with high content of P and Si showed some recrystallized structure. Rolled copper foil with lower P and Si impurity elements is completely recrystallized. The proportion of large-angle grain boundaries with orientation difference greater than 60° increases obviously, which is dominated by intact grains and large-angle grain boundaries.关键词
压延铜箔/再结晶/磷/硅Key words
rolled copper foil/recrystallization/phosphorus/silicon分类
矿业与冶金引用本文复制引用
张县委,彭勇宜,李周,田原晨,孙克斌..微量磷硅对压延铜箔再结晶行为的影响[J].有色金属科学与工程,2017,8(6):13-17,5.基金项目
国家重点研发计划项目(2016YFB0301300) （2016YFB0301300）
