南京航空航天大学学报2017，Vol.49Issue(6)：851-857,7.DOI:10.16356/j.1005-2615.2017.06.015
碳化硅MOSFET的Matlab/Simulink建模及其温度特性评估
Matlab/Simulink Modeling and Temperature Characteristics Evaluation of SiC MOSFET
摘要
Abstract
For the purpose of properly assessing the role of SiC MOSFET in the application of power con-verter ,an accurate model of SiC MOSFET is necessary .In this paper ,a SiC MOSFET model is pro-posed based on an advanced mobility model in Matlab/Simulink environment .For the powerful ability of solving equations and plenty of tool box in Matlab/Simulink ,more complex physical effects can be in-corporated into the model of SiC MOSFET .The accuracy of the model is validated with the production Datasheet and experimental results .Based on the developed model ,the effect of SiC/SiO2 interface traps on the transient temperature of SiC MOSFET is discussed ,and the comparison of temperature charac-teristics between SiC MOSFET and Si counterpart is carried out .Results show that SiC device exhibits very excellent temperature behaviors .关键词
碳化硅MOSFET/温度特性/界面陷阱Key words
SiC MOSFET/temperature characteristics/interface traps分类
信息技术与安全科学引用本文复制引用
周郁明,刘航志,杨婷婷,王兵..碳化硅MOSFET的Matlab/Simulink建模及其温度特性评估[J].南京航空航天大学学报,2017,49(6):851-857,7.基金项目
国家自然科学基金(51177003,61472228)资助项目 （51177003,61472228）
安徽高校自然科学研究(KJ2016A805)资助项目 （KJ2016A805）
安徽省自然科学基金(1508085MF129)资助项目. （1508085MF129）
