现代电子技术2018，Vol.41Issue(2)：44-47,4.DOI:10.16652/j.issn.1004-373x.2018.02.011
IGBT驱动电路密勒效应的应对策略分析
Strategy analysis on Miller effect of IGBT driver circuit
摘要
Abstract
The gate driver circuit of IGBT affects on-state voltage drop,switching time,switching loss and capability bear-ing short-circuit current of IGBT,which determines the static and dynamic characteristics of ICBT. The influence of Miller effect on driver during the on-and-off of IGBT and the coping strategies are researched and analyzed. The four strategies corresponding to parasitic conduction effect produced by Miller capacitance are analyzed,including changing gate resistance,increasing ca-pacitance between GE,using negative pressure drive and active Miller clamp technology. The influence of gate resistance in driv-er circuit on IGBT performance is also analyzed. On this basis,the contrast experiment was carried out. The experimental analy-sis results are given. The requirements of cable collection between the driver and the control panel are compared. The experimen-tal results shows that the setting of gate resistance directly affects the switching performance of IGBT,the practical demand needs to be considered to select an appropriate gate resistance value for ensuring the optimization of IGBT on-and-off in the practical application,the Miller capacitance in Miller effect has a great influence on the switching performance of IGBT,and the cable collecting the driver and the control panel should be as short as possible.关键词
IGBT/驱动电路/密勒效应/分布电容/门极电阻/动态特性Key words
IGBT/driver circuit/Miller effect/distributed capacitance/gate resistance/dynamic characteristic分类
信息技术与安全科学引用本文复制引用
宫鑫,王飞,彭文亮,许强强..IGBT驱动电路密勒效应的应对策略分析[J].现代电子技术,2018,41(2):44-47,4.基金项目
广东省普通高校特色创新项目(2015KTSCX173)Project Supported by Guangdong College and University Characteristic Innovation(2015KTSCX173) （2015KTSCX173）
