中国电机工程学报2017，Vol.37Issue(24)：7377-7383,7.DOI:10.13334/j.0258-8013.pcsee.172147
采用镓离子掺杂的高通流容量氧化锌压敏电阻
High Impulse Current Discharge Capability of ZnO Varistors by Doping Gallium Ions
摘要
Abstract
ZnO varistor is the core element of surge arrester, its performance decides the insulation level of power apparatus. This research studied how to improve the high-impulse current discharge capability of ZnO varistors by doping with gallium oxide. For this purpose, the current-voltage characteristics under small and upturn current characteristics were measured. In the small current region, the gallium dopant is available to improveNi andΦb, which inhibits the leakage current from increasing and improves the stability of ZnO varistors in operation. In the upturn region, the gallium dopant makes theI-V curve shift right, so the nonlinearity region is extended and the impulse current discharge capability of ZnO varistors is greatly improved. When doped with 0.45 % Ga2O3, the sintered varistors showed optimal electrical properties with a leakage current of 0.96μA/cm2, nonlinear coefficient of 85, residual voltage ratio of 1.63, and voltage gradient of 434 V/mm. This finding is helpful for dramatically improving the protective effect of surge protection devices assembled with ZnO varistors as the core element in electrical systems and greatly increasing the safety of electrical systems.关键词
氧化锌/压敏电阻/电气性能/晶界层/掺杂Key words
ZnO/varistor/electrical properties/grain boundaries/doping分类
信息技术与安全科学引用本文复制引用
孟鹏飞,胡军,邬锦波,何金良..采用镓离子掺杂的高通流容量氧化锌压敏电阻[J].中国电机工程学报,2017,37(24):7377-7383,7.基金项目
国家自然科学基金项目(50737001) （50737001）
国家电网公司科技项目(SGTYHT/15-JS-191). The National Natural Science Foundation of China(50737001) （SGTYHT/15-JS-191）
The State Grid Cooperation of China(SGTYHT/15-JS-191). （SGTYHT/15-JS-191）
