红外与毫米波学报2017，Vol.36Issue(5)：513-518,533,7.DOI:10.11972/j.issn.1001-9014.2017.05.001
强THz场下GaAs和InSb中瞬态谷间散射和碰撞电离
Transient intervalley scattering and impact ionization in GaAs and InSb in high THz field
摘要
Abstract
The ensemble Monte Carlo method was used to calculate the time-variation of scattering mechanisms and the carrier nonlinear dynamics evolution of n-doped GaAs and InSb in the high terahertz (THz) field.The time information of the electrons scattering into the side valleys and that of the electrons relaxation back into the original energy valley was directly obtained.The carriers transient increase process was also traced.Meanwhile,it showed that the intervalley scattering is the main mechanism of GaAs,while the impact ionization is a key point for InSb in high THz field.Furthermore,the work discussed the influences of the two mechanisms on related physical quantities:average kinetic energy,average velocity,and material conductivity.It indicates that the two mechanisms lead to nonlinear effects and play inverse roles in the two materials.The response time of impact ionization in InSb is longer than that of intervalley scattering in GaAs.The results have some guiding values in THz modulation field.关键词
THz波/载流子动力学/系宗蒙特卡罗/谷间散射/碰撞电离Key words
THz wave/carrier dynamics/ensemble Monte Carlo/intervalley scattering/impact ionization分类
数理科学引用本文复制引用
龚姣丽,刘劲松,张曼,褚政,杨振刚,王可嘉,姚建铨..强THz场下GaAs和InSb中瞬态谷间散射和碰撞电离[J].红外与毫米波学报,2017,36(5):513-518,533,7.基金项目
Supported by the National Natural Science Foundation of China (11574105,61475054,61405063,61177095) （11574105,61475054,61405063,61177095）
the Hubei Science and Technology Agency Project (2015BCE052) （2015BCE052）
the Fundamental Research Funds for the Central Universities(2017KFYXJJ029) （2017KFYXJJ029）
the Open Foundation of Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy (HBSKFMS2014007). （HBSKFMS2014007）
