红外与毫米波学报2017，Vol.36Issue(5)：543-549,7.DOI:10.11972/j.issn.1001-9014.2017.05.006
具有86mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管
86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2
摘要
Abstract
Back-gated (BG) Multi-layer MoS2 field effect transistors (FETs) have been fabricated on SiO2/Si (P++) substrate and electrically characterized.By optimizing the fabrication process and scaling down the SiO2 thickness to 10 nm,the device exhibit excellent switching performance with a subthreshold swing of 86 mV/dec and an Ion/Ioff ratio ～ 107.The little hysteresis and small SS jointly suggest tiny magnitude of interface traps or attached oxidants.The noise current induced by gate leakage can affect the measured switch ratio by overwhelming the effective Ioff current defined by VDs.According to the behaviors of MoS2 FETs expressed by this work and others',BG devices with SiO2 insulator present good performance and valuable potentials underutilized for rich applications.关键词
MoS2场效应晶体管/良好的亚阈值斜率/SiO2栅介质/界面态密度Key words
MoS2 FETs/excellent subthreshold swing/SiO2 dielectric/interface state density分类
信息技术与安全科学引用本文复制引用
刘强,赵清太,蔡剑辉,何佳铸,王翼泽,张栋梁,刘畅,任伟,俞文杰,刘新科..具有86mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管[J].红外与毫米波学报,2017,36(5):543-549,7.基金项目
Supported by the National Natural Science Foundation of China (61674161,61504083),Open Project of State Key Laboratory of Functional Materials for Informatics,Public welfare capacity building in Guangdong Province (2015A010103016),and the Science and Technology Foundation of Shenzhen (JCYJ20160226192033020) （61674161,61504083）
