红外与毫米波学报2017，Vol.36Issue(5)：550-553,562,5.DOI:10.11972/j.issn.1001-9014.2017.05.007
多胞MOSFET器件的射频建模和参数提取
Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device
摘要
Abstract
An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper.The skin effect and multiple-cell effect are both taken into account.In the extracting procedure,the parameters of elementary cells are determined from the conventional model based on the scalable rules.This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8 × 0.6 × 12 μm (number of gate fingers × unit gatewidth × cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.关键词
半导体技术/小信号模型/模型参数提取/趋肤效应/多胞模型Key words
semi-conductor technology/small-signal model/parameter extraction of model/skin effect/multi-cell model分类
信息技术与安全科学引用本文复制引用
周影,于盼盼,高建军..多胞MOSFET器件的射频建模和参数提取[J].红外与毫米波学报,2017,36(5):550-553,562,5.基金项目
Supported by the National Natural Science Foundation of China (61474044) （61474044）
