红外与毫米波学报2017，Vol.36Issue(5)：589-593,5.DOI:10.11972/j.issn.1001-9014.2017.05.013
磁光—光致发光分析CdZnTe单晶带边浅杂质能级
Shallow impurity levels in CdZnTe probed by magneto-photoluminescence
摘要
Abstract
This paper reports photoluminescence (PL) and magneto-PL study of CdZnTe single crystal grown by Bridgman method.Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at low temperature with sufficiently high spectral resolution and signal-to-noise ratio.PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below 1.5 eV.Further analysis with curve-fitting process shows that (1) stress distribution exists inside the CdZnTe sample without Te inclusions,and the stress causes the splitting of the heavyand light-hole subband.(2) The 1.57-eV PL feature originates from the shallow-donor to valenceband recombination.关键词
CdZnTe单晶/磁光光致发光光谱/应力/轻空穴Key words
CdZnTe crystal/magneto-photoluminescence/stress/shallow-donor分类
数理科学引用本文复制引用
祁镇,盛锋锋,朱亮,杨建荣,陈熙仁,邵军..磁光—光致发光分析CdZnTe单晶带边浅杂质能级[J].红外与毫米波学报,2017,36(5):589-593,5.基金项目
国家重点基础研究发展(973)计划课题(2014CB643901) （973）
上海市科委基础研究重点项目(14YF1404100,16JC1402400) （14YF1404100,16JC1402400）
国家基金面上项目(11274329,61675224)Supported by the Major State Basic Research Development Program of China (2014CB643901) （11274329,61675224）
Major Program for the Fundamental Research of Shanghai Committee of Science and Technology(14YF1404100,16JC1402400) and the National Natural Science Foundation of China General Program (11274329,61675224) （14YF1404100,16JC1402400）
