| 注册
首页|期刊导航|高电压技术|方波脉冲下不同纳米添加物对聚酰亚胺薄膜电气性能影响

方波脉冲下不同纳米添加物对聚酰亚胺薄膜电气性能影响

吴广宁 张兴涛 杨雁 钟鑫 吴旭辉 朱健

高电压技术2017,Vol.43Issue(12):3819-3826,8.
高电压技术2017,Vol.43Issue(12):3819-3826,8.DOI:10.13336/j.1003-6520.hve.20171127002

方波脉冲下不同纳米添加物对聚酰亚胺薄膜电气性能影响

Effects of Different Nano Fillers on Electrical Properties of Polyimide Films Under Impulse Voltage

吴广宁 1张兴涛 1杨雁 1钟鑫 1吴旭辉 1朱健1

作者信息

  • 1. 西南交通大学电气工程学院,成都610031
  • 折叠

摘要

Abstract

In order to study the influences of different nano fillers on the electrical properties of PI film,pure PI film,we prepared a 10% PI/SiO2 film and 10% PI/Al2O3 film by an in-situ polymerization method.Meanwhile,we tested the conductivity,dielectric spectrum,partial discharge (PD),and corona-resistant property,and determined the microstructure after breakdown by SEM.The results show that the conductivity of PI/SiO2 film is greater than that of PI/Al2O3 film,and the surface conductivity of PI/SiO2 film is 5 times bigger than that of PI/Al2O3 film.The dielectric constant decreases in the sequence of PI/Al2O3 film,PI/SiO2 film,and PI film.The dielectric loss (tanδ) of PI/SiO2 film and PI film first decrease and then increase with the increase of frequency.The tanδ of PI/Al2O3 film is the highest after 6 KHz.The tanδ-f curve of PI/Al2O3 film turns out a peak at 200Hz caused by relaxation of space charge.The partial discharge inception voltage and corona resistance time decrease in the sequence of PI/SiO2 film,PI/Al2O3 film,and PI film,but the change tendency of average amplitude of PD is on the contrary.There are some micro holes and gaps on the surfaces of the three films.The results indicate that the interface volume fraction and nanoparticles polarity are the main reasons for differences between the electrical properties of PI/SiO2 film and PI/Al2O3 film.

关键词

聚酰亚胺/方波脉冲/不同纳米添加物/介电频谱/局部放电/耐电晕

Key words

polyimide/impulse voltage/different nano fillers/dielectric spectrum/partial discharge/corona resistance

引用本文复制引用

吴广宁,张兴涛,杨雁,钟鑫,吴旭辉,朱健..方波脉冲下不同纳米添加物对聚酰亚胺薄膜电气性能影响[J].高电压技术,2017,43(12):3819-3826,8.

基金项目

国家自然科学基金(51177136) (51177136)

国家杰出青年基金(51325704).Project supported by National Natural Science Foundation of China (51177136),National Science Fund for Distinguished Young Scholars (51325704). (51325704)

高电压技术

OA北大核心CSCDCSTPCD

1003-6520

访问量2
|
下载量0
段落导航相关论文