人工晶体学报2017，Vol.46Issue(12)：2337-2342,6.
单晶硅外延生长晶化硅薄膜的研究
Study on the Crystalline Silicon Films Induced by Monocrystalline Silicon with Epitaxial Growth
摘要
Abstract
Amorphous silicon films were prepared by magnetron co-sputtering on the substrates of P type monocrystalline silicon , which have been corroded and cleaned via a mixed of acid solutions .The silicon films were realized by a rapid thermal annealing ( RTP) at 480 ℃ for 30 min in N2 atmosphere .Optical metallographic microscope , X-ray diffractometer and Raman scattering were used to characterize the silicon films and monocrystalline substrates .The corrosion effect of mixed acid solution on monocrystalline silicon surface , the structures and band gaps of the films were investigated .The results show that , the smooth surface was obtained after the monocrystalline silicon was corroded by mixed acid solution , a-Si films was turned to crystalline silicon films after rapid thermal annealing and crystal-induced by seed crystal.The crystallization rate raduced from 90.0％ to 37.0％, the grain size reduced from 6.65 nm to 1.71 nm, the band gap increased from 1.18 eV to 1.52 eV and the roughness decreased with the a-Si films increasing from 80 nm to 280 nm.关键词
诱导晶化/外延/退火/硅薄膜/晶化率Key words
induced crystallization/epitaxially grown/annealing/silicon thin film/crystallization rate分类
数理科学引用本文复制引用
杨启鸣,杨雯,段良飞,姚朝辉,杨培志..单晶硅外延生长晶化硅薄膜的研究[J].人工晶体学报,2017,46(12):2337-2342,6.基金项目
国家自然科学基金联合基金(U1037604) （U1037604）
云南省基础研究重点项目(2017FA024) （2017FA024）
