人工晶体学报2017，Vol.46Issue(12)：2438-2442,5.
真空退火和氢退火对ZnO:B薄膜电学和光学性能的影响
Effect of Vacuum and Hydrogen Annealing on the Electrical and Optical Properties of ZnO:B Thin Films
摘要
Abstract
B doped ZnO ( BZO ) thin films were fabricated on glass substrates by LPCVD method .The effects of vacuum and hydrogen atmosphere annealing on the optical and electrical properties of BZO thin films were studied respectively .The results show that the two thermal treatments in vacuum and hydrogen atmosphere lead to reverse effects on optical and electric properties of BZO thin films .After vacuum annealing , the electrical conductivity of BZO thin films decreased with annealing temperature increasing and the total transmission of BZO thin films increased over long-wavelength range due to reduction of carrier concentration.On the contrary, after a post thermal treatment in hydrogen atmosphere , the electrical conductivity of the BZO films was obviously improved , simultaneously keeping the transmittance almost the same , which may be attributed to a dramatic increase of carrier mobility .This hydrogen annealing should provide a method for further improving the optical and electrical properties of BZO thin films.关键词
ZnO薄膜/低压化学气相沉积/导电率/透光率/退火气氛Key words
ZnO thin film/low pressure chemical vapor deposition/conductivity/transmittance/annealing atmosphere分类
信息技术与安全科学引用本文复制引用
李旺,唐鹿,薛飞,罗哲,郭鹏,刘石勇..真空退火和氢退火对ZnO:B薄膜电学和光学性能的影响[J].人工晶体学报,2017,46(12):2438-2442,5.基金项目
江西科技学院自然科学项目(16ZRYB10) （16ZRYB10）
国家自然科学基金(21571095) （21571095）
