首页|期刊导航|半导体学报（英文版）|Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes
半导体学报（英文版）2018，Vol.39Issue(1)：104-115,12.DOI:10.1088/1674-4926/39/1/011008
Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes
Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes
摘要
关键词
atomic layer deposition (ALD)/oxide semiconductor/thin film transistor/flexible device/mechanical stressKey words
atomic layer deposition (ALD)/oxide semiconductor/thin film transistor/flexible device/mechanical stress引用本文复制引用
Jiazhen Sheng,Ki-Lim Han,TaeHyun Hong,Wan-Ho Choi,Jin-Seong Park..Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J].半导体学报（英文版）,2018,39(1):104-115,12.基金项目
Project supported by the National Research Foundation of Korea (NRF) (No.NRF-2017R1D1A1B03034035),the Ministry of Trade,Industry & Energy (No.#10051403),and the Korea Semiconductor Research Consortium. （NRF）
