红外技术2018，Vol.40Issue(1)：1-5,5.
碲锌镉衬底上中长双色红外碲镉汞分子束外延生长研究
Research on Growth of M/L-wavelength Dual-band IR-MCT on CZT Substrate by MBE
摘要
Abstract
Results are reported on the molecular-beam epitaxial (MBE) growth of a dual-band HgCdTe (MCT) structure. The structures were designed for a mid/long(M/L)-wavelength infrared detector, grown at 180℃ on (211)B-oriented CdZnTe substrates. Growth details including substrate deoxidation, growth temperature, and buffer layer are also reported. The surface quality, defect quantity, compositional uniformity, thickness uniformity, composition profile and crystal quality were analyzed and tested using phase contrast microscopy, scanning electron microscopy, Fourier-transform infrared transmission, secondary-ion mass spectroscopy and X-ray diffraction rocking curve. The surface defect was less than 600cm-2, the compositional uniformity was≤0.001 and thickness uniformity was≤0.9μm, the XRD FWHM shows a 65arcsec result, all indicating good surface and crystal quality for our dual-band MBE MCT.关键词
碲锌镉/中长波双色/碲镉汞/分子束外延Key words
CdZnTe/mid-/long-wave dual-band/HgCdTe/MBE分类
信息技术与安全科学引用本文复制引用
杨春章,覃钢,李艳辉,李达,孔金丞..碲锌镉衬底上中长双色红外碲镉汞分子束外延生长研究[J].红外技术,2018,40(1):1-5,5.基金项目
总装备部光电火控基金项目. （）
