厦门大学学报（自然科学版）2018，Vol.57Issue(1)：1-8,8.DOI:10.6043/j.issn.0438-0479.201703036
开路和短路电学边界外延铁电薄膜的畴结构及铁电性能
Domain Structures and Ferroelectric Property Under Open and Short Circuit Electrical Boundary in Epitaxial Ferroelectric Thin Films
摘要
Abstract
Considering constraints on the domain switching of epitaxial ferroelectric thin films with the substrate,we use the stress function method to calculate the eigenstress of epitaxial ferroelectric thin films.Further,according to the phase field method,the do-main structures and polarization intensity of PbTiO3 epitaxial ferroelectric thin films under different electrical conditions are analyzed.The present results with the short circuit electrical boundary show that the critical thickness,in which a domain switches to a/c/a domain in epitaxial ferroelectric thin films,is very close to that using the finite element method under the same condition.The numerical results with the open circuit electrical boundary show that the critical thickness of a domain switching to a/c/a domain is much greater than that with the short circuit electrical boundary.The substrate,which affects the eigenstress in thin films,leads to two layers of a domain and a/c/a domain in thin films.With the increase in thickness,the polarization intensity increases.When do-main structures switch from a domain to a/c/a domain,the polarization intensity has an obvious increase.关键词
应力函数/开路电学边界/短路电学边界/相场法/铁电畴结构Key words
stress function/open circuit electrical boundary/short circuit electrical boundary/phase field method/ferroelectric domain structures分类
数理科学引用本文复制引用
雷俐莎,林晓辉,周志东..开路和短路电学边界外延铁电薄膜的畴结构及铁电性能[J].厦门大学学报（自然科学版）,2018,57(1):1-8,8.基金项目
国家自然科学基金(11572271) （11572271）
