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Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications

Zhi-Peng Wu Jun Zhu Li-Bin Fang

电子科技学刊2017，Vol.15Issue(4)：364-368,5.

电子科技学刊2017，Vol.15Issue(4)：364-368,5.DOI:10.11989/JEST.1674-862X.70718075

Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications

Zhi-Peng Wu ¹Jun Zhu ¹Li-Bin Fang¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China
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摘要

关键词

Flexible/pulsed laser deposition/resistive switching/ZnO thin film

Key words

Flexible/pulsed laser deposition/resistive switching/ZnO thin film

引用本文复制引用

Zhi-Peng Wu,Jun Zhu,Li-Bin Fang..Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications[J].电子科技学刊,2017,15(4):364-368,5.

基金项目

This work was supported by the National Key Research and Development Program of China under Grant No.2016YFB0700201 and the National Natural Science Foundation of China under Grant No.51372030. （）

电子科技学刊

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ISSN：1674-862X

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