北京师范大学学报（自然科学版）2017，Vol.53Issue(5)：528-531,4.DOI:10.16360/j.cnki.jbnuns.2017.05.004
铒离子注入氮化镓的光学活性与缺陷掺杂变化
Optical activity and defect/dopant evolution in Er-implanted GaN
摘要
Abstract
The annealing behavior of 100 keV Er-implanted GaN at a fluence of 1015cm-2 is reported in the present work.The microstructural and optical properties of samples with different thermal treatments were studied by room temperature photoluminescence (PL),Raman spectra,and Rutherford backscattering.A possible correlation between microstructural and optical properties was established.A PL peak at about 1 540 nm was observed for all as-implanted and post-annealed samples.The PL peak intensity reached a maximum at an annealing temperature of 900 ℃.The decrease in PL intensity at higher annealing temperature (1 050 ℃) could be attributed to a reduction of optically active Er sites due to diffusion-out of Er with increasing annealing temperatures as shown by Rutherford backscattering spectrometry.关键词
材料改性/氮化镓/离子注入/拉曼光谱/RBSKey words
material modification/GaN/ion implantation/Raman spectrum/RBS分类
数理科学引用本文复制引用
迟林翔,陈田祥,孙煜东,李琳,成枫锋..铒离子注入氮化镓的光学活性与缺陷掺杂变化[J].北京师范大学学报（自然科学版）,2017,53(5):528-531,4.基金项目
北京师范大学科研基金资助项目 （）
中央高校基本科研业务费专项基金资助项目(2013NT10) （2013NT10）
