电子器件2018，Vol.41Issue(1)：8-13,6.DOI:10.3969/j.issn.1005-9490.2018.01.002
离子注入和热退火工艺对应变Si材料应力影响研究
Study on Ion Implantation and Thermal Annealing Effecting on the Stress of Strained Si
摘要
Abstract
Strained Si is used to propose a new way to extend the Moore law. The ion implantation and thermal annealing process affect on the stress of strained Si. An experiment scheme is designed used to study the relation among the stress of strained Si with the type、dose、energy of ion implantation and it with the temperature、time of thermal annealing. Results of Raman scattering show that stress of strained Si is hardly changed at the dose of ion implantation being less than 5×1014cm-2,and stress of strained Si is hardly changed within 1 000 ℃ and 60 min.关键词
应变Si材料/离子注入/热退火/拉曼测试Key words
strained Si material/ion implantation/thermal annealing/Raman scattering分类
信息技术与安全科学引用本文复制引用
王颖..离子注入和热退火工艺对应变Si材料应力影响研究[J].电子器件,2018,41(1):8-13,6.
