电子器件2018，Vol.41Issue(1)：30-35,6.DOI:10.3969/j.issn.1005-9490.2018.01.006
等离子体处理对非晶IGZO柔性薄膜晶体管性能的影响
Influence of Plasma Treatment to the Performance of Amorphous IGZO-Based Flexible Thin Film Transistors
摘要
Abstract
Thin film transistors(TFTs)using In-Ga-Zn Oxide(IGZO)as active layer and the gate insulator was treated with NH3plasma and N2O plasma,respectively,which is fabricated on flexible Polyimid substrate.The performances of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage,field-effect mobility, Ion/Ioffratio,sub-threshold swing(SS)and bias stress stability of the devices.The TFT with a NH3plasma treatment for 10 second shows the best performance;specifically,threshold voltage of 0.34 V,field-effect mobility of 15.97 cm2/Vs, Ion/Ioffratio of 6.33×107,and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs can be used as driving devices in the next-generation flexible displays.关键词
薄膜晶体管/铟钾锌氧/等离子体处理/柔性Key words
TFTs/IGZO/plasma treatment/flexible分类
信息技术与安全科学引用本文复制引用
陈龙龙,孙翔,石继锋..等离子体处理对非晶IGZO柔性薄膜晶体管性能的影响[J].电子器件,2018,41(1):30-35,6.基金项目
上海市科委项目(16JC1400602) （16JC1400602）
