物理学报2017，Vol.66Issue(21)：17-30,14.DOI:10.7498/aps.66.216803
金属衬底上高质量大面积石墨烯的插层及其机制
Intercalation and its mechanism of high quality large area graphene on metal substrate
摘要
Abstract
Graphene,a two-dimensional material with honeycomb lattice,has attracted great attention from the communities of fundamental research and industry,due to novel phenomena such as quantum Hall effect at room temperature,Berry phase,and Klein tunneling,and excellent properties including extremely high carrier mobility,high Young's modulus,high thermal conductivity and high flexibility.Some key issues hinder graphene from being used in electronics,including how to integrate it with Si,since Si based technology is widely used in modern microelectronics,and how to place high-quality large area graphene on semiconducting or insulating substrates.A well-known method of generating largearea and high-quality graphene is to epitaxially grow it on a single crystal metal substrate.However,due to the strong interaction between graphene and metal substrate,the intrinsic electronic structure is greatly changed and the conducting substrate also prevents it from being directly used in electronics.Recently,we have developed a technique,which intercalates silicon between epitaxial graphene and metal substrate such as Ru (0001) and Ir (111).Experimental results from Raman,angle-resolved photoemission spectroscopy,and scanning tunneling spectroscopy confirm that the intercalation layer decouples the interaction between graphene and metal substrate,which results in the recovery of its intrinsic band structure.Furthermore,we can use this technique to intercalate thick Si beyond one layer and intercalate Si between graphene and metal film,which indicates the possibility of integrating both graphene and Si device and vast potential applications in industry by reducing its cost.Besides Si,many other metal elements including Hf,Pb,Pt,Pd,Ni,Co,Au,In,and Ce can also be intercalated between graphene and metal substrate,implying the universality of this technique.Considering the versatility of these elements,we can expect this intercalation technique to have wide applications in tuning graphene properties.We also investigate the intercalation mechanism in detail experimentally and theoretically,and find that the intercalation process is composed of four steps:creation of defects,migration of heteroatoms,self-repairing of graphene,and growth of intercalation layers.The intercalation of versatile elements with different structures by this technique provides a new route to the construction of graphene heterostructures,espectially van der Waals heterostructure such as graphene/silicene and graphene/hafnene,and also opens the way for placing graphene on insulating substrate for electronic applications if the intercalation layer can be oxidized by further oxygen intercalation.关键词
石墨烯/硅/插层技术/扫描隧道显微镜Key words
graphene/silicon/intercalation technique/scanning tunneling microscopy引用本文复制引用
郭辉,路红亮,黄立,王雪艳,林晓,王业亮,杜世萱,高鸿钧..金属衬底上高质量大面积石墨烯的插层及其机制[J].物理学报,2017,66(21):17-30,14.基金项目
国家重点研发计划(批准号:2016YFA0202300)、国家重点基础研究发展计划(批准号:2013CBA01600)、国家自然科学基金(批准号:61390501,61471337,51325204,61622116,61504149,11604373)、中国科学院和中国科学院大学青年教师启动基金资助的课题.Project supported by the National Key Research and Development Projects of China (Grant No.2016YFA0202300),the National Basic Research Program of China (Grant No.2013CBA01600),the National Natural Science Foundation of China (Grant Nos.61390501,61471337,51325204,61622116,61504149,11604373),the Chinese Academy of Sciences,and the President Funds of University of Chinese Academy of Sciences. （批准号:2016YFA0202300）
