物理学报2017，Vol.66Issue(21)：145-156,12.DOI:10.7498/aps.66.217802
石墨烯-硅基混合光子集成电路
Graphene-silicon hybrid photonic integrated circuits
摘要
Abstract
Silicon photonics is considered as a promising technology to realize high-performance photonic integrated circuits,owing to its complementary metal oxide semiconductor-compatibility which is applicable for large-scale integration at low cost.However,due to the limitation of optoelectronic properties of silicon,the challenge to the realization of highperformance active device on the silicon integrated platform still exists.The recent development of graphene-silicon hybrid photonic integrated circuit provides a practical solution to this problem,because graphene,as a superior twodimensional material,possesses many advantageous optoelectronic properties,such as high mobility,high electro-optical coefficient,and broadband absorption,which can be fully exploited to break through the material limitation of silicon.Moreover,compared with other active integrated materials such as germanium and compound semiconductors,graphene is cost-effective and can be conveniently integrated with silicon photonic device.Here,we review some important rcscarch progress of graphene-silicon hybrid photonic integrated circuits that include optical sources,optical waveguides,optical modulators,and photodetectors.The challenges and prospects of these devices are also analyzed,which are expected to be beneficial to the relevant research communities.关键词
硅基光子学/石墨烯光子学/集成光子学Key words
silicon photonics/graphene photonics/integrated photonics引用本文复制引用
肖廷辉,于洋,李志远..石墨烯-硅基混合光子集成电路[J].物理学报,2017,66(21):145-156,12.基金项目
国家重点基础研究发展计划(批准号:2013CB632704)和国家自然科学基金(批准号:11434017)资助的课题.Project supported by the National Basic Research Program of China (Grant No.2013CB632704) and the National Natural Science Foundation of China (Grant No.11434017). （批准号:2013CB632704）
