西安电子科技大学学报（自然科学版）2018，Vol.45Issue(1)：106-111,6.DOI:10.3969/j.issn.1001-2400.2018.01.019
近阈值非预充静态随机存储器
Near-threshold non-precharged SRAM
摘要
Abstract
In order to save the power consumed by the static random access memory when it deals with voice or video data,a novel memory cell is proposed which eliminates the precharge mechanism in the read operation, thus suppressing the invalid power compared with the conventional 6T and 8T cell. Furthermore,multiple threshold technology is employed in the cell,which not only guarantees the read static noise margin,but also enhances read ability.In addition,a Schmitt trigger based inverter is also applied in the cell array and hence it improves the read speed.Two memories including the proposed one and the conventional one are fabricated in 130 nm process, respectively. Test results indicate that the proposed memory is excellent in reducing power consumption compared with the conventional 8T memory, and hence it becomes a suitable choice for the low power chips.关键词
静态随机存储器/非预充/声音和视频/低功耗Key words
static random access memory/non-precharged/voice and video/low power分类
信息技术与安全科学引用本文复制引用
蔡江铮,黑勇,袁甲,陈黎明..近阈值非预充静态随机存储器[J].西安电子科技大学学报（自然科学版）,2018,45(1):106-111,6.基金项目
中国科学院先导专项资助项目(XDA06020401) （XDA06020401）
国家自然科学基金资助项目(61306039) （61306039）
