西安电子科技大学学报（自然科学版）2018，Vol.45Issue(1)：162-167,6.DOI:10.3969/j.issn.1001-2400.2018.01.029
绝缘层上单轴应变硅的应力计算与分析
Stress calculation and analysis of uniaxially strained silicon on the insulator
摘要
Abstract
In order to study the wafer level uniaxial strained silicon insulation layer on the stress distribution and variation trend,a uniaxial strained SOI wafer is successfully fabricated by annealing in SOI mechanical bending at the wafer level,with the advantages of low cost and simple process.On this basis, the stress of mechanical induced uniaxially strained SOI wafers in various directions under different bending radii is simulated with ANSYS,and the results show that the stress along the bending direction,which is suitable for the channel of the COMS device, is much larger than that perpendicular to the bending direction.Also,the stress significantly increases and the uniformity of the stress distribution decreases with the decrease of bending radii.The stress distribution of the uniaxially strained SOI obtained by the optical fiber grating measurement is in good agreement with the ANSYS simulation results.关键词
机械弯曲退火/晶圆级单轴应变/绝缘体上硅/应力分布/有限元分析Key words
mechanical bending annealing/wafer level uniaxial strain/silicon on insulator/stress distribution/finite element analysis分类
信息技术与安全科学引用本文复制引用
苗东铭,戴显英,吴淑静,赵天龙,邵晨峰,郝跃..绝缘层上单轴应变硅的应力计算与分析[J].西安电子科技大学学报（自然科学版）,2018,45(1):162-167,6.基金项目
国家部委重点基金资助项目(9140A08020115DZ01024) （9140A08020115DZ01024）
高等学校学科创新引智计划资助项目(B12026) （B12026）
