半导体学报（英文版）2018，Vol.39Issue(2)：17-21,5.DOI:10.1088/1674-4926/39/2/022002
Simulation model for electron irradiated IGZO thin film transistors
Simulation model for electron irradiated IGZO thin film transistors
G K Dayananda 1C Shantharama Rai 2A Jayarama 3Hyun Jae Kim4
作者信息
- 1. Department of E&C Engineering, Canara Engineering College, Mangalore 574219, India
- 2. Department of E&C Engineering, AJIET, Mangalore 575009, India
- 3. Department of Physics, SCEM, Adyar, Mangalore 575007, India
- 4. Yonsei University, Seoul 120-749, Republic of Korea
- 折叠
摘要
关键词
simulation model/IGZO/TFT/electron irradiationKey words
simulation model/IGZO/TFT/electron irradiation引用本文复制引用
G K Dayananda,C Shantharama Rai,A Jayarama,Hyun Jae Kim..Simulation model for electron irradiated IGZO thin film transistors[J].半导体学报（英文版）,2018,39(2):17-21,5.
