半导体学报（英文版）2018，Vol.39Issue(2)：86-90,5.DOI:10.1088/1674-4926/39/2/026003
An anisotropic thermal-stress model for through-silicon via
An anisotropic thermal-stress model for through-silicon via
摘要
关键词
3-D IC/through-silicon via/thermal-stress/TCAD simulationKey words
3-D IC/through-silicon via/thermal-stress/TCAD simulation引用本文复制引用
Song Liu,Guangbao Shan..An anisotropic thermal-stress model for through-silicon via[J].半导体学报（英文版）,2018,39(2):86-90,5.基金项目
Project supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund (No.U1537208). （No.U1537208）
